High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
S. Bangsaruntip, G. M. Cohen, A. Majumdar, Y. Zhang, S. U. Engelmann, N. Fuller, L. M. Gignac, S. Mittal, J. S. Newbury, M. Guillorn, T. Barwicz, L. Sekarichttp://academic.research.microsoft.com/io.ashx?type=5&id=50862399&selfId1=0&selfId2=0&maxNumber=12&query=
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT = 825/950 ¿A/¿m (circumference-normalized) or 2592/2985 ¿A/¿m (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/¿m. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.