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High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling,10.1109/IEDM.2009.5424364,S. Bangsarunti

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling   (Citations: 14)
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S. Bangsaruntip, G. M. Cohen, A. Majumdar, Y. Zhang, S. U. Engelmann, N. Fuller, L. M. Gignac, S. Mittal, J. S. Newbury, M. Guillorn, T. Barwicz, L. Sekarichttp://academic.research.microsoft.com/io.ashx?type=5&id=50862399&selfId1=0&selfId2=0&maxNumber=12&query=
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT = 825/950 ¿A/¿m (circumference-normalized) or 2592/2985 ¿A/¿m (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/¿m. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.
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