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Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications

Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonv

Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications   (Citations: 5)
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Dong-jun Seong, Nodo Lee, Musarrat Hasan, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Minseok Jo, Wootae Lee, Seonghyun Kim, Yun Hee Jang, Y. Lee, M. Sunghttp://academic.research.microsoft.com/io.ashx?type=5&id=50862444&selfId1=0&selfId2=0&maxNumber=12&query=
An in-depth study on the resistive switching mechanism of perovskite oxide based device was performed. Compared with filament type resistive switching device, excellent switching uniformity was obtained due to controlled redox reaction at metal/oxide interface. Electromigration of oxygen ion under the bipolar electric filed can explain the switching behavior. Formation of ultrathin AlOx at the interface can guarantee excellent retention characteristics at 125°C. Compared with the large area (50 �? 50 um2) memory cell, the nanoscale device (¿=50 nm) showed better memory performance such as faster switching speed, better uniformity, endurance, and retention characteristics.
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    • ...Some recent reports of low reset current have also been in the 1-μA range only [1], [5]...
    • ...Fig. 2(b) indicates that the NiSi-gated device shows very good retention in both the LRS and HRS for the test duration of 10 4 sa tVREAD = 1 V and T = 85 ◦ C. We choose higher VREAD here compared with 0.5 V used in many previous studies [5], [6] because the Ig‐Vg trends for the LRS and HRS start to show a notable difference only for Vg > 0.7 V. We confirm that the mechanism of switching here only involves oxygen ion (O 2− ) transport by ...

    N. Raghavanet al. Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacan...

    • ...Furthermore, most of the devices reported in the existing works (except for [12]) are of less technological relevance, i.e., the PCMO layer thicknesses were in the range of 125–400 nm, and the device sizes in most instances were larger than 1 μm 2 ...

    Yiran Chenet al. PCMO Device With High Switching Stability

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