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Global parameter extraction for a multi-gate MOSFETs compact model

Global parameter extraction for a multi-gate MOSFETs compact model,10.1109/ICMTS.2010.5466821,Shijing Yao,T. H. Morshed,D. D. Lu,S. Venugopalan,Weize

Global parameter extraction for a multi-gate MOSFETs compact model  
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A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated.
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