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Photographic distinction of defects in polycrystalline Si by spectroscopic electroluminescence

Photographic distinction of defects in polycrystalline Si by spectroscopic electroluminescence,10.1109/PVSC.2010.5614381,Takashi Fuyuki,Ayumi Tani,Sin

Photographic distinction of defects in polycrystalline Si by spectroscopic electroluminescence  
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By using spectroscopic EL imaging technique, the intrinsic defects and the extrinsic deficiencies can be distinguished clearly at a glance. The intrinsic defects with deep traps induce infra-red emission depending on the electronic trap level. By comparing the filtered images, extrinsic defects which may cause serious effect on long term reliability can be detected photographically.
Conference: Photovoltaic Specialists, IEEE Conference - PVSC , pp. 001380-001382, 2010
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