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Terahertz imaging detectors in a 65-nm CMOS SOI technology

Terahertz imaging detectors in a 65-nm CMOS SOI technology,10.1109/ESSCIRC.2010.5619749,E. Öjefors,N. Baktash,Yan Zhao,R. A. Hadi,H. Sherry,U. R. Pfe

Terahertz imaging detectors in a 65-nm CMOS SOI technology   (Citations: 5)
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Terahertz imaging detectors implemented in a 65-nm CMOS SOI technology are presented. Low-noise square-law power detection is provided by distributed self-mixing in NFET-based passive mixers with optional integrated amplifiers. The pixels of the imaging array are equipped with folded-dipole antennas designed for through-substrate illumination by an integrated silicon lens. With front-side illumination and conductor backing of the chip a maximum non-amplified responsivity (Rv) of 1.1 kV/W and a minimum noise-equivalent power (NEP) of pW/√Hz is achieved. In the intended lens-integrated backside illumination configuration a further 8-dB improvement of Rv and NEP due to the elimination of substrate modes is predicted by EM simulations.
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    • ...Direct square-law focal­ plane arrays in CMOS were demonstrated at frequencies up to 650 GHz, with reported responsivities as high as 1. 1 kVIW and N EP as low as 50 pWI VllZ at 650 GHz in 65 nm SOl CMOS [3]...

    Richard Al Hadiet al. A broadband 0.6 to 1 THz CMOS imaging detector with an integrated lens

    • ...CMOS-on-SOI technology allowed to reach NEP values as low as 50 pW Hz [75]...

    Fabian Friederichet al. THz Active Imaging Systems With Real-Time Capabilities

    • ...CMOS direct detectors at 650 GHz [2], 650 GHz SiGe heterodyne receivers [3], 410 GHz VCOs [4], and 820 GHz SiGe chip sets [5] have been reported recently...
    • ...beyond the cut-off frequency it [1], [2], [7]...
    • ...In that situation, the overall radiation efficiency may be drastically reduced when considering Si substrates of low resistivity [2]...
    • ...by a microwave synthesizer and coupled to a diagonal-hom antenna, as explained in [7], [2]...
    • ...The physical area of the top-illuminated detector in the FPA was taken as the effective area [2]...

    Hani Sherrylet al. Lens-integrated THz imaging arrays in 65nm CMOS technologies

    • ...for imaging at 650 GHz by Lisauskas and Öjefors et al. in 2009 [7],[8].Morerecently,aFETdetectorfabricatedina65-nmSOI CMOStechnologyusinghighresistivitysubstrateswasreported to achieve an NEP (Noise Equivalent Power) of 50 pW/Hz at 650 GHz [9]...
    • ...Because of these, the performance of diode detector should remain almost the same at 600 GHz and could be better than that of the NMOS detectors [6], [8] including that fabricated using 65-nm CMOS on a high resistivity substrate [9]...

    Ruonan Hanet al. A 280GHz Schottky Diode Detector in 130-nm Digital CMOS

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