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25 nm-wide silicon wire fabrication with i-line photolithography for efficient spot size converters

25 nm-wide silicon wire fabrication with i-line photolithography for efficient spot size converters,10.1109/ECOC.2010.5621412,Y. Sakakibara,N. Ichimur

25 nm-wide silicon wire fabrication with i-line photolithography for efficient spot size converters  
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Free from the resolution limit, very narrow inverse taper structure of silicon wire could be fabricated with i-line photolithography. By covering the taper with a polyimide waveguide core, efficient coupling from optical fiber to silicon wire waveguide was possible.
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