Non-volatile memory using graphene oxide for flexible electronics
A non-volatile memory device using graphene oxide (GO) as a resistive switching element is demonstrated. It is found that the electrode materials and GO thickness is critical factors to determine the switching properties of devices. The Al/GO/ITO structure with 30 nm thick GO shows On/Off current ratio of 103. In addition, the GO memory device exhibits excellent performance when applied to flexible substrate, with good reliability and flexibility.