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Non-volatile memory using graphene oxide for flexible electronics

Non-volatile memory using graphene oxide for flexible electronics,10.1109/NANO.2010.5697794,Seul Ki Hong,Ji-Eun Kim,Sang Ouk Kim,Byung Jin Cho

Non-volatile memory using graphene oxide for flexible electronics  
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A non-volatile memory device using graphene oxide (GO) as a resistive switching element is demonstrated. It is found that the electrode materials and GO thickness is critical factors to determine the switching properties of devices. The Al/GO/ITO structure with 30 nm thick GO shows On/Off current ratio of 103. In addition, the GO memory device exhibits excellent performance when applied to flexible substrate, with good reliability and flexibility.
Conference: IEEE Conference on Nanotechnology - IEEE-NANO , pp. 604-606, 2010
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