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Improving the Reliability of a FPGA Using Fault-Tolerance Mechanism Based on Magnetic Memory (MRAM)

Improving the Reliability of a FPGA Using Fault-Tolerance Mechanism Based on Magnetic Memory (MRAM),10.1109/ReConFig.2010.10,Luís Vitório Cargnini,Yoa

Improving the Reliability of a FPGA Using Fault-Tolerance Mechanism Based on Magnetic Memory (MRAM)   (Citations: 1)
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The current SRAM based FPGA, are more and more susceptible to Single Event Upset (SEU) due to Neutron particle interference. The problem is exasperated reducing the CMOS submicronic scale in the manufacturing process, specially for the next generation of SRAM-based FPGAs. Nowadays is common practice for SRAM manufactories to embed fault tolerant mechanisms like Error-Correcting Code schemes in SRAM memory banks for CMOS technology below 90 nm, to mitigate SEU. The present work proposes an approach to improve the reliability of the FPGAs, regarding SEU events at ground level for the future submicronic scale technologies proposing the adoption of Magnetic Random Access Memories (MRAMs) cells into a simple fault-tolerant system for FPGAs manufactured below 65 nm submicronic scale.
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    • ...An error detection scheme based on the syndrome calculation is needed for each frame; few a small overhead of K gates per frame [48]...
    • ...If all the BRAM were replaced by MRAM, the first interest is of course that MRAM density is certainly x2 or x3 the density of SRAM, that mean for the same silicon area FPGA device could increased the total Memory by x2 or x3 - Instead to have 16416 Kbit, we can imagine to have device with up to 32000 Kbit without any silicon overhead [48]...

    Weisheng Zhaoet al. Design of MRAM based logic circuits and its applications

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