Universal guiding principle for the fabrication of highly scalable MONOS-type memory atomistic recipes based on designing interface oxygen chemical po

Universal guiding principle for the fabrication of highly scalable MONOS-type memory atomistic recipes based on designing interface oxygen chemical potential-


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For the fabrication of highly scalable metal-oxide-nitride-oxide-semiconductor (MONOS) type memories, we propose a universal guiding principle, where the interfacial O chemical potential is designed to prevent the formation of defects that undergo irreversible structural changes. Our first principles calculations indicate that O-related defects in SiN charge trap layers in a MONOS-type memory intrinsically cause the local collapse of the SiN layer and memory degradation. These features originate from the existence of a large number of metastable structures, which can readily appear with program/erase cycles or thermal activation. To overcome this issue, we propose a skilful and realistic recipe to prevent O incorporation into SiN layers: an insert of a thin Si layer into the SiO2 layer near SiO2/SiN interface. This fabrication process leads to drastic lowering of O chemical potential in the interface. Moreover, the present proposal is a general and universal guiding principle to synthesize the sharp and high quality oxide interfaces which are necessary to form aggressively downsized devices.

Conference: International Electron Devices Meeting - IEDM , pp. 5.7.1-5.7.4, 2010

DOI: 10.1109/IEDM.2010.5703305

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Universal guiding principle for the fabrication of highly scalable MONOS-type memory atomistic recipes based on designing interface oxygen chemical po