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The impact of hole-induced electromigration on the cycling endurance of phase change memory

The impact of hole-induced electromigration on the cycling endurance of phase change memory,10.1109/IEDM.2010.5703440,M. H. Lee,R. Cheek,C. F. Chen,Y.

The impact of hole-induced electromigration on the cycling endurance of phase change memory  
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M. H. Lee, R. Cheek, C. F. Chen, Y. Zhu, J. Bruley, F. H. Baumann, Y. H. Shih, E. K. Lai, M. Breitwisch, A. Schrott, S. Raoux, E. A. Josephhttp://academic.research.microsoft.com/io.ashx?type=5&id=51017574&selfId1=0&selfId2=0&maxNumber=12&query=
The high current density induced failure in Ge2Sb2Te5(GST)-based phase change memory (PCM) is investigated. A strong dependence of cycling endurance on the polarity of the operation current is observed and reported for the first time. The cycling endurance is reduced by 4 orders of magnitude when the current polarity is reversed. Careful TEM analysis of failed cells revealed a thin void in GST over the bottom electrode, but only in the reverse polarity samples. This phenomenon can be explained by hole-induced electromigration at the electrode/GST interface. The impact of electromigration on scaled phase change memory is discussed.
Conference: International Electron Devices Meeting - IEDM , pp. 28.6.1-28.6.4, 2010
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