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Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm2/Vs electron mobility for low-temperature substrates

Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm2/Vs electron mobility for low-temperature sub

Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm2/Vs electron mobility for low-temperature substrates  
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Chang-Hong Shen, Jia-Min Shieh, Hao-Chung Kuo, Jung Y. Huang, Wen-Hsien Huang, Chih-Wei Hsu, Yu-Hsin Lin, Hung-Yu Chiu, Huang-Yan Jhan, Bau-Tong Dai, Ching-Ting Lee, Ci-Ling Panhttp://academic.research.microsoft.com/io.ashx?type=5&id=51017589&selfId1=0&selfId2=0&maxNumber=12&query=
For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140°C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm2/V-s have been achieved. Device performance with process temperature down to 90°C and 60°C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.
Conference: International Electron Devices Meeting - IEDM , pp. 31.1.1-31.1.4, 2010
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