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A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology

A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology,10.1109/ISSCC.2011.5746287,Ki-Tae Park,Ohsuk Kwon,Sangyong Yoon,Myung-Hoon Choi,

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A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology  
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Ki-Tae Park, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, In-Mo Kim, Bo-Geun Kim, Min-Seok Kim, Yoon-Hee Choi, Seung-Hwan Shin, Youngson Song, Joo-Yong Park, Jae-Eun Leehttp://academic.research.microsoft.com/io.ashx?type=5&id=51036628&selfId1=0&selfId2=0&maxNumber=12&query=
Conference: Solid-State Circuits IEEE International Conference - ISSCC , pp. 212-213, 2011
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