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Keywords
(9)
Device Simulation
Electric Field
Experimental Data
Finite Element
Mathematical Model
Modeling and Simulation
Thin Film
2 dimensional
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Modeling and characterization for polarization hysteresis of ferroelectric polymers
Modeling and characterization for polarization hysteresis of ferroelectric polymers,10.1109/SECON.2011.5752938,Bikash Shrestha,Ron Pieper,Wudyalew Won
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Modeling and characterization for polarization hysteresis of ferroelectric polymers
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Bikash Shrestha
,
Ron Pieper
,
Wudyalew Wondmagegn
,
Nikhil Satyala
We present a
modeling and simulation
based study for the polarization hysteresis of ferroelectric polymers. A 2- dimensional
finite element
device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteresis characteristics for the recently reported
experimental data
on Au/Poly(vinylidene fluoride- trifluoroethylene)/Au metal-insulator-metal (MIM) device. The simulated polarization dependence characteristics in the P(VDF-TrFE) thin-film were predicted from the parameters coercive field, remnant polarization and spontaneous polarization which were extracted from fitting to the experimental characteristics. The
mathematical model
which is referred by SILVACO for ATLAS's ferroelectric model was implemented in MATLAB to generate the hysteresis curve. Landau-Devonshire expression for
electric field
in terms of polarization is also implemented in the MATLAB to produce the polarization hysteresis curve of mono-crystalline and polycrystalline ferroelectrics. The polarization hysteresis characteristics obtained from the ATLAS and MATLAB simulations were in good agreement with the reported experimental hysteresis characteristics.
Published in 2011.
DOI:
10.1109/SECON.2011.5752938
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