Conductivity and magnetic properties study on doped semiconductor material of 3C-SiC: A first-principle investigation,10.1109/ICEICE.2011.5777405,Baic

Conductivity and magnetic properties study on doped semiconductor material of 3C-SiC: A first-principle investigation


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Using the first-principles calculations, the geometrical and electronic structures, including lattice constant, band structure and density of state (DOS) of B, Al, Ga, V, Cr and Mn doped 3C-SiC are systematically calculated. Based on the result, the conductivity mechanism of p-type SiC (B, Al and Ga) is investigated. In addition, the magnetic properties of 3C-SiC doped with 3d-transition metals (V, Cr and Mn) are calculated. The results indicate that Cr doped 3C-SiC system exhibits more stable ferromagnetism and the ferromagnetism results from the exchange splitting of Cr-3d state.

Conference: International Conference on Electric Information and Control Engineering - ICEICE , 2011

DOI: 10.1109/ICEICE.2011.5777405

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Conductivity and magnetic properties study on doped semiconductor material of 3C-SiC: A first-principle investigation,10.1109/ICEICE.2011.5777405,Baic

References (9)

N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films (Citations: 6)

Lateral RESURF MOSFET fabricated on 4H-SiC(0001~) C-face (Citations: 10)

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates (Citations: 8)

SiC devices: physics and numerical simulation (Citations: 111)

Electronic structure and half-metallic property of Mn-doped β-SiC diluted magnetic semiconductor (Citations: 4)


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