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IC process compatible anodic electrode structures for unipolar HfOx-based RRAM

IC process compatible anodic electrode structures for unipolar HfOx-based RRAM,10.1109/VTSA.2011.5872249,W. S. Chen,Y. S. Chen,Y. Y. Hsu,S. Y. Yang,W.

IC process compatible anodic electrode structures for unipolar HfOx-based RRAM   (Citations: 1)
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W. S. Chen, Y. S. Chen, Y. Y. Hsu, S. Y. Yang, W. H. Liu, H. Y. Lee, P. Y. Gu, C. H. Tsai, S. M. Wang, P. S. Chen, Y. H. Wang, F. T. Chenhttp://academic.research.microsoft.com/io.ashx?type=5&id=51054235&selfId1=0&selfId2=0&maxNumber=12&query=
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    • ...The rupture and formation of conductive filaments for unipolar switching are believed to be associated with the local Joule-heat-induced redox of NiOx [11], [12]...
    • ...It is interesting to compare this paper with the data in [12] in which the unipolar switching was achieved by employing Ni electrode/HfOx dielectrics/TiN electrode structure; the stabilization of the conductive filament generation inside the switching HfOx film due to the AlOy incorporation can significantly enhance the switching parameters of the device...

    X. A. Tranet al. Ni Electrode Unipolar Resistive RAM Performance Enhancement by $\hbox{...

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