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A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technology

A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technolo

A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technology  
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S.-Y. Chung, S. Chan, K.-T. Chang, B. Davis, G. Kathawala, K. Ko, S.-C. Lee, Z. Liu, C. Lin, K. Ohtsuka, S.-H. Park, T. Thurgatehttp://academic.research.microsoft.com/io.ashx?type=5&id=51056354&selfId1=0&selfId2=0&maxNumber=12&query=
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