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GaInNAs(Sb) for solid-state laser engineering

GaInNAs(Sb) for solid-state laser engineering,10.1109/ICTON.2011.5970793,S. Calvez

GaInNAs(Sb) for solid-state laser engineering  
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Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-based devices to the application-rich wavelength band ranging from 1100 to 1700 nm. In this article, we review our recent advances in the development of dilute nitride components whose prime application is aimed at the development of more advanced solid-state lasers. In particular, we present Vertical (External) Cavity Surface Emitting Lasers also known as Semiconductor Disk Lasers and their use as pump sources for thulium-doped lasers, Raman fibre amplification or as compact sources for yellow/red emission. We will also show that GaInNAsSb Semiconductor Saturable Absorber Mirrors (SESAMs) can be effective elements to trigger and maintain pico/femtosecond pulse operation in mode-locked solid-state lasers. Finally, we will introduce methods exploiting the above-mentioned SESAMs to control the regime of operation of ultrafast lasers.
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