Academic
Publications
A high-efficiency 100-W four-stage Doherty GaN HEMT power amplifier module for WCDMA systems

A high-efficiency 100-W four-stage Doherty GaN HEMT power amplifier module for WCDMA systems,10.1109/MWSYM.2011.5972568,Andrei Grebennikov

A high-efficiency 100-W four-stage Doherty GaN HEMT power amplifier module for WCDMA systems   (Citations: 1)
BibTex | RIS | RefWorks Download
In this paper, a novel high-efficiency four-stage Doherty power amplifier architecture convenient for prac- tical implementation in base station applications for modern communication standards has been proposed and fabricated. In practical verification, each power amplifier is based on a 25-W Cree GaN HEMT device with the transmission-line load network corresponding to an inverse Class F mode ap- proximation. In a CW operation mode with the same bias voltage for each transistor, an output power of 50 dBm with a drain efficiency of 77% was achieved at a supply voltage of 34 V. In a single-carrier WCDMA operation mode with PAR of 6.5 dB, a high drain efficiency of 61% was achieved at an average output power of 43 dBm, with ACLR1 measured at −31 dBc level.
Cumulative Annual
View Publication
The following links allow you to view full publications. These links are maintained by other sources not affiliated with Microsoft Academic Search.
Sort by: