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Keywords
(6)
Dislocation Density
Dislocations
epitaxial growth
iii-v semiconductors
Lattice Parameter
Transition Region
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Metamorphic and non-conventional ‘buffer’ layers
Metamorphic and non-conventional ‘buffer’ layers,T. F. Kuech,S. Jha,M. K. Wiedmann,C. A. Paulson,S. E. Babcock,T. S. Kuan,L. J. Mawst,J. Kirch,Tae Wan
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Metamorphic and non-conventional ‘buffer’ layers
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T. F. Kuech
,
S. Jha
,
M. K. Wiedmann
,
C. A. Paulson
,
S. E. Babcock
,
T. S. Kuan
,
L. J. Mawst
,
J. Kirch
,
Tae Wan Kim
The integration of large lattice mismatch materials through
epitaxial growth
requires the introduction of a controlled interface or transitional region, often referred to as a buffer layer. These, often relatively thick, transitional layers allow for a change in
lattice parameter
and a reduction in the threading
dislocation density
attributed to the required mismatch
dislocations
in the strain-relaxed materials. New designs for these transitional layers are emerging which allow for a reduction in buffer layer thickness, smoother morphology, and lower threading dislocation densities. These metamorphic buffer layers allowed the development of devices accessing new ranges of performance and, in the case of optical devices, wavelength regimes. The reduction of the buffer layer to a 'single interface' may be possible through the use of nano-patterning and advanced processing which provides control over the initial phases of nucleation and strain relaxation.
Published in 2011.
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References
(8)
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(
Citations: 1
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Jeremy Kirch
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Journal:
Journal of Crystal Growth - J CRYST GROWTH
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(
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(
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