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Leakage issues in failure analysis of p+ SiGe active area short monitor

Leakage issues in failure analysis of p+ SiGe active area short monitor,10.1109/IPFA.2011.5992769,Ankur Arya,Greg M Johnson,Paul Ronsheim,Jochonia Nxu

Leakage issues in failure analysis of p+ SiGe active area short monitor  
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Ankur Arya, Greg M Johnson, Paul Ronsheim, Jochonia Nxumalo, Christopher M Molella, Richard J Murphy, Seung Chul Lee, Chris Daleo, Bum Ki Moon, Hiroyuki Onoda, Chung Woh Lai, Shenzhi Yanghttp://academic.research.microsoft.com/io.ashx?type=5&id=51106707&selfId1=0&selfId2=0&maxNumber=12&query=
During technology development, leakage during inline or bench test of a p+ SiGe active areas short monitor structures may produce false short signal or hide real defect induced leakage. This paper investigates different sources of leakages - defects in SiGe, pressure due to tester probe on test pads, silicidation issues and boron P+ and arsenic N halo ion implants dose/energy. Some changes to mitigate the extraneous leakage are also presented in the paper.
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