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High speed sensing using ion sensitive field effect transistors

High speed sensing using ion sensitive field effect transistors,10.1109/IWASI.2011.6004687,D. R. S. Cumming,P. N. Shields,M. S. Piechocinski,B. Nemeth

High speed sensing using ion sensitive field effect transistors  
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We present new preliminary data from arrays of ion sensor field effect transistors (ISFETs). Two devices are presented. The first consists of a planar array ofISFETs that are operated as an ion image sensor enabling the direct observation of ion flow over the surface of the chip in real-time. The second is an innovative form of Coulter-counter that is fully implemented in a CMOS-MEMS format. The device is tested as a cytometer by observing the flow of red-blood cells.
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