Silicon nanowire temperature sensor and its characteristic,10.1109/NEMS.2011.6017434,Chuan-Po Wang,Chien-Wei Liu,Chie Gau

Silicon nanowire temperature sensor and its characteristic


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silicon nanowires (SiNWs) with well orientation and crystallization are synthesized by the vapor-liquid-solid (VLS) process, and doped as n-type by an ex situ process using spin on dopant (SOD) technique. The ex situ doping process using SOD was based on solid-state diffusion, which comprised two stages: pre-coating and drive in. The phosphorous concentration in SiNWs was controlled by appropriate selections of the drive in temperature and the time period, which are 950 o C and 5-60 min in the present studies. The doped nanowire can be readily made into a temperature sensor with much better resolution and response. Calibration of the SiNW temperature sensor at different doping level has been performed. With a concentration of 4 x 10 15 atoms/cm 3 the SiNW sensor has the best temperature resolution (6186 :� / o C) and sensitivity in this study. Keywords-SiNWs; VLS synthesis; Ex situ doping; SOD;

Conference: Nano/Micro Engineered and Molecular Systems - NEMS , 2011

DOI: 10.1109/NEMS.2011.6017434

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