Physical and electrical characterization of Germanium or Tellurium rich GexTe1−x for phase change memories
N. Pashkov, G. Navarro, J.-C. Bastien, M. Suri, L. Perniola, V. Sousa, S. Maitrejean, A. Persico, A. Roule, A. Toffoli, G. Reimbold, B. De Salvohttp://academic.research.microsoft.com/io.ashx?type=5&id=51145017&selfId1=0&selfId2=0&maxNumber=12&query=
This paper intends to provide an overview of electrical performances of GexTe1−x with dif- ferent proportions of Germanium or Tellurium for phase-change memories. Germanium-rich as well as Tellurium-rich phase-change materials have been in- tegrated in simple test devices and programming characteristics, data retention and endurance per- formances are thoroughly analyzed. Tellurium-rich GeTe alloys exhibit stable programming characteris- tics that can sustain endurance test up to 1e7 cycles, while Germanium-rich GeTe, probably triggered by Ge segregation, shows an unstable RESET state during repeated write/erase cycles. Data retention on fresh devices is best for out-of-stoichiometry GeTe.