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Double-balanced 130–180 GHz passive and balanced 145–165 GHz active mixers in 45 nm CMOS

Double-balanced 130–180 GHz passive and balanced 145–165 GHz active mixers in 45 nm CMOS,10.1109/CICC.2011.6055323,Ozgur Inac,Andy Fung,Gabriel M. Reb

Double-balanced 130–180 GHz passive and balanced 145–165 GHz active mixers in 45 nm CMOS


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This paper presents wideband passive and active mixers in the 100-200 GHz range. The mixers are built using a 45nm CMOS SOI process with an ft of 220 GHz when referenced to the top metal layer. The passive double-balanced mixer results in a conversion loss of 12-13 dB from 130-180 GHz (including balun, transmission line and GSG pad losses) and achieves optimal performance with 3 dBm of LO power (referenced to the GSG LO pads). The active mixer achieves a conversion loss of 4.5 dB with a 3-dB bandwidth of 145-165 GHz, and consumes only 10 mW of DC power from a 1.5 V supply. The application areas are in wideband Gbps communications, imaging arrays with large IF bandwidths, and mm-wave spectrometers. To our knowledge, this work represents the first demonstration of high performance CMOS mixers in the 130-180 GHz frequency range.

Conference: Custom Integrated Circuits Conference - CICC , pp. 1-4, 2011

DOI: 10.1109/CICC.2011.6055323

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Keywords (2)

Double-balanced 130–180 GHz passive and balanced 145–165 GHz active mixers in 45 nm CMOS,10.1109/CICC.2011.6055323,Ozgur Inac,Andy Fung,Gabriel M. Reb

References (3)

A compact, fully differential D-band CMOS amplifier in 65nm CMOS (Citations: 1)

Nanoscale CMOS Transceiver Design in the 90–170GHz Range (Citations: 15)

Record RF performance of 45-nm SOI CMOS Technology (Citations: 33)


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