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30 GHz Ge/SiGe multiple quantum well photodiode

30 GHz Ge/SiGe multiple quantum well photodiode,10.1109/GROUP4.2011.6053807,P. Chaisakul,D. Marris-Morini,G. Isella,D. Chrastina,X. Le Roux,S. Edmond,

30 GHz Ge/SiGe multiple quantum well photodiode  
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Surface-illuminated vertical p-i-n Ge/SiGe multiple quantum wells photodiodes are demonstrated with a low dark current density of 200 mA/cm 2 and 10 GHz optical bandwidth at -1 V which reaches over The use of direct-gap transitions in group IV indirect-gap semiconductors such as Ge/SiGe heterostructures or bulk SiGe (1-8) provides a promising path towards the monolithic integration of light sources, optical modulators, and photodetectors. Particularly, Ge/Si0.15Ge0.85 multiple quantum wells (MQWs) have been demonstrated to exhibit strong light modulation based on the quantum confined Stark effect (QCSE) (6) within the spectral range from 1400 nm (0.89 eV) to 1440 nm (0.86 eV). Moreover, transient optical gain (7) and room temperature direct gap related photoluminescence (PL) (8) of Ge/Si0.15Ge0.85 multiple quantum wells have been reported with the PL spectra having peak intensity at about 0.88 eV. Therefore, the light detection performance of the Ge/SiGe MQWs within the same wavelength region is investigated in this paper. High speed operation of the Ge/SiGe MQWs is reported at 1405 nm (0.88 eV) using a simple surface illuminated vertical p-i-n photodiode with detection bandwidth as high as 30GHz. These results demonstrate the capability of Ge/SiGe heterostructures to work compatible with 40 Gbit/s data transmission.
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