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Keywords
(10)
Compact Model
Density of State
Effective Mass
Indexing Terms
Logic Gate
Mathematical Model
Numerical Simulation
Surface Potential
Double Gate
Low Density
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Capacitance Compact Model for Ultrathin LowElectronEffectiveMass Materials
Capacitance Compact Model for Ultrathin LowElectronEffectiveMass Materials,10.1109/TED.2011.2168529,IEEE Transactions on Electron Devices,Sivakumar
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Capacitance Compact Model for Ultrathin LowElectronEffectiveMass Materials
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Sivakumar Mudanai
,
Ananda Roy
,
Roza Kotlyar
,
Titash Rakshit
,
Mark Stettler
We present a
compact model
to calculate the capaci tance of undoped highmobility lowdensityofstates materials in doublegate device architecture. Analytical equations for estimat ing the subband energies, while taking the effect of wavefunction penetration into the gate oxide and the
effective mass
discon tinuity, are presented for the first time in a compact modeling framework. The
surface potential
equation for a two subband system is solved, assuming FermiDirac statistics, and compared to numerical SchrodingerPoisson simulations. The importance of accurately treating the charge profile distribution is illustrated, and an analytical expression for the effective oxide thickness to model the charge centroid is developed. Index Termsâ€”Compact model, density of states (DOS), quantum capacitance, IIIV.
Journal:
IEEE Transactions on Electron Devices  IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 12, pp. 42044211, 2011
DOI:
10.1109/TED.2011.2168529
Cumulative
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