Academic
Publications
Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials

Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials,10.1109/TED.2011.2168529,IEEE Transactions on Electron Devices,Sivakumar

Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials  
BibTex | RIS | RefWorks Download
We present a compact model to calculate the capaci- tance of undoped high-mobility low-density-of-states materials in double-gate device architecture. Analytical equations for estimat- ing the subband energies, while taking the effect of wavefunction penetration into the gate oxide and the effective mass discon- tinuity, are presented for the first time in a compact modeling framework. The surface potential equation for a two subband system is solved, assuming Fermi-Dirac statistics, and compared to numerical Schrodinger-Poisson simulations. The importance of accurately treating the charge profile distribution is illustrated, and an analytical expression for the effective oxide thickness to model the charge centroid is developed. Index Terms—Compact model, density of states (DOS), quantum capacitance, III-V.
Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 12, pp. 4204-4211, 2011
Cumulative Annual
View Publication
The following links allow you to view full publications. These links are maintained by other sources not affiliated with Microsoft Academic Search.