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20% Efficient Passivated Large-Area Metal Wrap Through Solar Cells on Boron-Doped Cz Silicon

20% Efficient Passivated Large-Area Metal Wrap Through Solar Cells on Boron-Doped Cz Silicon,10.1109/LED.2011.2167709,IEEE Electron Device Letters,E.

20% Efficient Passivated Large-Area Metal Wrap Through Solar Cells on Boron-Doped Cz Silicon  
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E. Lohmuller, B. Thaidigsmann, M. Pospischil, U. Jager, S. Mack, J. Specht, J. Nekarda, M. Retzlaff, A. Krieg, F. Clement, A. Wolf, D. Birohttp://academic.research.microsoft.com/io.ashx?type=5&id=51158345&selfId1=0&selfId2=0&maxNumber=12&query=
We present metal wrap through passivated emitter and rear solar cells (MWT-PERC) on monocrystalline p-type silicon featuring laser-doped selective emitter structures in com- bination with either screen-printed (SP) or more advanced dis- pensed front side contacts. Thermally grown silicon oxide layers serve as emitter and rear surface passivation. Laser-fired contacts connect the SP aluminum rear contact to the silicon base. The rear side features solder contacts for both polarities. Conversion effi- ciency values of 20.6% for float-zone and 20.1% for Czochralski- grown silicon (not stabilized) are achieved on large-area cells with 149 cm 2 wafer size. These are within the highest values reported for large-area p-type silicon solar cells to date. Analytical modeling enables a consistent description of the devices and allows for determining the dominating loss mechanisms. Index Terms—Metal wrap through (MWT), MWT-passivated emitter and rear cell (PERC), silicon solar cell, surface passivation.
Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 12, pp. 1719-1721, 2011
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