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RF extraction of self-heating effects in FinFETs of various geometries

RF extraction of self-heating effects in FinFETs of various geometries,10.1109/SIRF.2011.5719331,Sergej Makovejev,Sarah Olsen,Jean-Pierre Raskin

RF extraction of self-heating effects in FinFETs of various geometries  
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Dynamic self-heating effect is characterised in n-channel FinFETs on Silicon-on-Insulator (SOI) platform. RF extraction technique is discussed and dependence of thermal resistance on fin width, number of parallel fins and fin spacing is studied.
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