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Monolithic Integration of Enhancement and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth

Monolithic Integration of Enhancement and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth,10.1109/TED.2011.2105268,IEEE Transactions on

Monolithic Integration of Enhancement and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth   (Citations: 1)
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D. F. Brown, K. Shinohara, A. Williams, I. Milosavljevic, R. Grabar, P. Hashimoto, P. J. Willadsen, A. Schmitz, A. L. Corrion, S. Kim, D. Regan, C. M. Butlerhttp://academic.research.microsoft.com/io.ashx?type=5&id=51178457&selfId1=0&selfId2=0&maxNumber=12&query=
We have achieved the monolithic integration of two III-nitride device structures through the use of etching and re- growth by molecular beam epitaxy (MBE). Using this regrowth technique, we integrated enhancement-mode (E-mode) and de- pletion-mode (D-mode) AlN/GaN/AlGaN double-heterojunction field-effect transistors (DHFETs) on a single SiC substrate, wherein the E-mode devices had a 2-nm-thick AlN barrier layer and the D-mode devices had a 3.5-nm-thick AlN barrier layer. The direct-current and radio-frequency (RF) performance of the resulting DHFETs was equivalent to devices fabricated using our baseline process with a normal MBE growth. D-mode devices with a gate length of 150 nm had a threshold voltage Vth of −0.10 V, a peak transconductance gm value of 640 mS/mm, and current- gain and power-gain cutoff frequencies fT and fmax of 82 and 210 GHz, respectively. E-mode devices on the same wafer with the same dimensions had a Vth value of +0.24 V, a peak gm value of 525 mS/mm, and fT and fmax values of 50 and 150 GHz, respectively. The application of this regrowth technique is not, in any way, limited to the integration of E- and D-mode devices, and this method greatly expands the design possibilities of RF and power switching circuits in the nitride material system.
Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 4, pp. 1063-1067, 2011
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