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Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors

Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,10.1109/TNS.2010.2101615,IEEE Transactions on Nuclear Sci

Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors  
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The radiation response of advanced non-planar mul- tiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width . The incorporation of total ionizing dose (TID) effects into a physics-based surface-po- tential compact model allows for the effects of radiation-induced degradation in MuGFET devices to be modeled in circuit sim- ulators, e.g., SPICE. A set of extracted parameters are used in conjunction with closed-form expressions for the surface potential, thereby enabling accurate modeling of the radiation-response and its dependence on . Total ionizing dose (TID) experiments and two-dimensional (2D) TCAD simulations are used to validate the compact modeling approach presented in this paper. Index Terms—Compact model, FinFETs, multiple gate field ef- fect transistors (MuGFETs), silicon-on-insulator (SOI), total ion- izing dose (TID).
Journal: IEEE Transactions on Nuclear Science - IEEE TRANS NUCL SCI , vol. 58, no. 2, pp. 499-505, 2011
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