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Effects of EUV Irradiation on Poly-Si SONOS NVM Devices

Effects of EUV Irradiation on Poly-Si SONOS NVM Devices,10.1109/LED.2011.2121052,IEEE Electron Device Letters,Bing-Yue Tsui,Chih-Chan Yen,Po-Hsueh Li,

Effects of EUV Irradiation on Poly-Si SONOS NVM Devices  
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The effects of extreme-ultraviolet (EUV)-irradiation- induced damage on the characteristics of a silicon-oxide-nitride- oxide-silicon (SONOS) memory device are investigated. After EUV irradiation, changes in the memory window and program/ erase speed indicate the generation of positive charges and new traps. Retention performance degrades after high-dose irradia- tion, which indicates that the tunneling layer is damaged. En- durance performance degrades severely because the damage in the blocking oxide results in serious electron back injection after cycling operations. These defects cannot be recovered after 600 ◦ C annealing. It is recommended that in-process high-dose EUV irra- diation on a SONOS stack after a front-end-of-line process should be avoided.
Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 5, pp. 614-616, 2011
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