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An Integrated Photodetector Based on a Modulation-Doped Heterostructure

An Integrated Photodetector Based on a Modulation-Doped Heterostructure,10.1109/LPT.2011.2119476,IEEE Photonics Technology Letters,Jingming Yao,Jianho

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An Integrated Photodetector Based on a Modulation-Doped Heterostructure  
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An optically active heterostructure field effect tran- sistor (HFET) structure is described as a three terminal detector. With an in-plane waveguide optical input it demonstrates natural optoelectronic integration with transistors. Both depletion and enhancement threshold devices are realized with photocurrent enhancement of the HFET current of 1.72 for direct coupling. A simple model of photocurrent generation based on bipolar operation provides good agreement. The bidirectional response may be suitable for optical gating functions in balanced detection. Index Terms—Detector, field effect transistor (FET), optoelec- tronic integrated circuits (OEICs), waveguide.
Journal: IEEE Photonics Technology Letters - IEEE PHOTONIC TECHNOL LETT , vol. 23, no. 10, pp. 633-635, 2011
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