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Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations

Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations,10.1109/TED.2011.2119320,IEEE Transactions o

Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations  
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Francesco Conzatti, Nicola Serra, David Esseni, Marco De Michielis, Alan Paussa, Pierpaolo Palestri, Luca Selmi, Stephen M. Thomas, Terence E. Whall, David Leadley, E. H. C. Parker, Liesbeth Wittershttp://academic.research.microsoft.com/io.ashx?type=5&id=51181548&selfId1=0&selfId2=0&maxNumber=12&query=
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous modeling ap- proach to provide insights about strain-induced mobility enhance- ment in FinFETs and guidelines for device optimization. Good agreement between simulated and measured mobility is obtained using strain components measured directly at device level by a novel holographic technique. A large vertical compressive strain is observed in metal gate FinFETs, and the simulations show that this helps recover the electron mobility disadvantage of the (110) FinFET lateral interfaces with respect to (100) interfaces, with no degradation of the hole mobility. The model is then used to systematically explore the impact of stress components in the fin width, height, and length directions on the mobility of both n -a ndp-type FinFETs and to identify optimal stress configura- tions. Finally, self-consistent Monte Carlo simulations are used to investigate how the most favorable stress configurations can improve the ON current of nanoscale MOSFETs.
Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 6, pp. 1583-1593, 2011
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