Academic
Publications
Monolithic Integration of Silicon, Germanium, and Silica-Based Optical Devices for Telecommunications Applications

Monolithic Integration of Silicon, Germanium, and Silica-Based Optical Devices for Telecommunications Applications,10.1109/JSTQE.2010.2089430,IEEE Jou

Monolithic Integration of Silicon, Germanium, and Silica-Based Optical Devices for Telecommunications Applications   (Citations: 1)
BibTex | RIS | RefWorks Download
This paper presents our recent progress with the inte- gration of silicon (Si) photonic devices for optical telecommunica- tions. To integrate Si wire waveguides, germanium (Ge) photode- tectors (PDs) and silica waveguides, we have developed processes for the selective epitaxial growth of Ge on a Si waveguide core and for the low-temperature deposition of silica waveguide film and introduced spot size converters (SSCs) for coupling Si-wire and silica waveguide with low loss. Using these processes and SSCs, we have managed to monolithically integrate Si variable optical attenuators (VOAs) and Ge PDs, and Si VOAs and a silica ar- rayed waveguide grating (AWG). In the integrated VOA-PD, the Ge PD accurately detects the attenuation of light power in the Si VOA. The 3-dB cutoff frequency in VOA-PD synchronous oper- ation is around 100 MHz, which is limited by the VOA. The in- tegrated VOA-AWG provides high-speed power-level adjustment independently in every channel of the AWG with a response time of 15 ns. These integrated Si photonics devices exhibit sufficient performance for application to future telecommunications systems that combine WDM and burst-mode packets.
Cumulative Annual
View Publication
The following links allow you to view full publications. These links are maintained by other sources not affiliated with Microsoft Academic Search.
Sort by: