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High-Power 1.48-$\mu$m Wafer-Fused Optically Pumped Semiconductor Disk Laser

High-Power 1.48-$\mu$m Wafer-Fused Optically Pumped Semiconductor Disk Laser,10.1109/LPT.2011.2143399,IEEE Photonics Technology Letters,J. Lyytikainen

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High-Power 1.48-$\mu$m Wafer-Fused Optically Pumped Semiconductor Disk Laser  
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An output power up to 5 W at 1.48- m wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown on a GaAs substrate. An intracavity dia- mond heatspreader bonded to the gain structure surface provides efficient heat removal from the active element. The results further validate that the wafer fusion technique offers a flexible platform for high-power disk lasers in a wide wavelength range. Index Terms—Optical pumping, quantum wells, semiconductor lasers, surface-emitting lasers.
Journal: IEEE Photonics Technology Letters - IEEE PHOTONIC TECHNOL LETT , vol. 23, no. 13, pp. 917-919, 2011
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