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Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High $\kappa$ and Integration With a TiN Metal Gate in a Gate-Last Process

Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High $\kappa$ and Integration With a TiN Metal Gate in a Gate-Last Pro

Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High $\kappa$ and Integration With a TiN Metal Gate in a Gate-Last Process  
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In this brief, high-κ HfZrO (via atomic layer deposition) fabricated by a novel multideposition multiroom- temperature annealing (MDMA) technique in ultraviolet-ozone (UVO) ambient is systematically investigated by both electrical and physical characterization and is integrated with a TiN metal gate in a gate-last process. Compared with the conventional rapid-thermal-annealed sample, it is found that the device an- nealed via MDMA in UVO demonstrates the following: 1) more than one order of leakage current reduction at 25 ◦ C and 125 ◦ C without an equivalent oxide thickness penalty; 2) less susceptibility to stress-induced degradation; and 3) improved time-dependent dielectric-breakdown lifetime. Grain boundary suppression and healing of oxygen vacancies are believed to be responsible for the improvement, as evidenced by scanning tunneling microscopy and X-ray photoelectron spectroscopy analysis. Index Terms—Complementary metal-oxide-semiconductor (CMOS), gate-last, high-κ (HK), metal gate (MG), sub-32-nm technology node, ultraviolet ozone (UVO).
Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 7, pp. 2177-2181, 2011
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