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Quasi2Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices

Quasi2Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices,10.1109/TED.2011.2132135,IEEE Transactions on Electron Dev

Quasi2Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices  
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Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 7, pp. 2072-2080, 2011
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