Grain Boundaries, Phase Impurities, and Anisotropic Thermal Conduction in PhaseChange Memory,10.1109/LED.2011.2150193,IEEE Electron Device Letters,Zij

Grain Boundaries, Phase Impurities, and Anisotropic Thermal Conduction in PhaseChange Memory


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Thermal conduction strongly influences the pro- gramming energy and speed in phase-change-memory devices. The thermal conductivity of the crystalline phase of Ge2Sb2Te 5 can be strongly anisotropic due to phase impurities at grain boundaries. This letter models this effect using effective medium arguments, lends further support to the hypothesis that phase impurities are responsible for the anisotropy, and estimates the impact of anisotropic heat conduction on device performance. Electrothermal simulations predict that the reduced in-plane con- ductivity will allow closer spacing of lateral-cell devices and reduce the reset programming current by 20%-30%. Index Terms—Chalcogenide, nonvolatile memories, phase-change memory (PCM), thermal conductivity anisotropy.

Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 7, pp. 961-963, 2011

DOI: 10.1109/LED.2011.2150193

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Keywords (8)

Grain Boundaries, Phase Impurities, and Anisotropic Thermal Conduction in PhaseChange Memory,10.1109/LED.2011.2150193,IEEE Electron Device Letters,Zij

References (10)

Phase change memories: State-of-the-art, challenges and perspectives (Citations: 45)

Phase Change Memory (Citations: 14)

Current status of the phase change memory and its future (Citations: 130)

The Impact of Thermal Boundary Resistance in PhaseChange Memory Devices (Citations: 15)

The Role of Interfaces in Damascene PhaseChange Memory (Citations: 7)


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