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210GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

210GHz InAlN/GaN HEMTs With Dielectric-Free Passivation,10.1109/LED.2011.2147753,IEEE Electron Device Letters,Ronghua Wang,Guowang Li,Oleg Laboutin,Yu

210GHz InAlN/GaN HEMTs With Dielectric-Free Passivation   (Citations: 2)
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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 7, pp. 892-894, 2011
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    • ...electron mobility transistors (HEMTs) have drawn intensive attention as an alternative to conventional AlGaN/GaN HEMTs due to their excellent dc and RF performance [1]–[9]...
    • ...The process follows the same flow as presented in [9]: mesa isolation using chlorine-based reactive ion etching, followed by alloyed ohmic contacts using a Si/Ti/Al/Ni/Au stack annealed at 860 ◦ Ci n N 2 ambient; rectangular Ni/Au (40/90 nm) gates without gate recess were defined by electron-beam lithography, followed by lift-off...
    • ...passivation (DFP). The impact of DFP on device performance has been discussed elsewhere [9]...
    • ...Fig. 1(a) shows the common-source family of I–V so f the device, measured for Vds = 0–10 V and Vgs = 1t o− 8V . The device has an on-resistance Ron = 1.2 Ω · mm extracted at Vgs = 1 V. The maximum output current density Id = 2.0 A/mm at Vgs = 1 V is comparable with the dc performance of lattice-matched ternary InAlN HEMTs [9]...
    • ...The physics responsible for the second peak in gm at Vgs = −0.5 V, which has also been observed in InAlN/GaN HEMTs [5], [7], [9], is still under investigation...
    • ...The effective electron velocity ve−eff = 2π × Lg × fT was calculated to be 0.9 × 10 7 cm/s, slightly higher than ve−eff = 0.8 × 10 7 cm/s in the ternary InAlN/GaN HEMTs fabricated under the same conditions [9]...

    Ronghua Wanget al. 220GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

    • ...In addition, other approaches such as using sulfide passivation [3], dielectric-free passivation process by the O2/Ar plasma [9], or...

    Han-Yin Liuet al. Novel Oxide-Passivated AlGaN/GaN HEMT by Using Hydrogen Peroxide Treat...

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