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Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated $ \hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectrics

Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated $ \hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectrics,10.1109/LED.2011.2162933,IEEE

Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated $ \hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectrics  
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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 10, pp. 1373-1375, 2011
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