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Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation

Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation,10.1109/TED.2010.2092779,IEEE Transactions on Electron Devices,Steven

Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation   (Citations: 1)
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The effective work function of a reactively sputtered TiN metal gate is shown to be tunable from 4.30 to 4.65 eV. The effective work function decreases with nitrogen flow during reactive sputter deposition. Nitrogen annealing increases the ef- fective work function and reduces Dit. Thinner TiN improves the variation in effective work function and reduces gate dielectric charge. Doping of the polysilicon above the TiN metal gate with B or P has negligible effect on the effective work function. The work-function-tuned TiN is integrated into ultralow-power fully depleted silicon-on-insulator CMOS transistors optimized for sub- threshold operation at 0.3 V. The following performance metrics are achieved: 64-80-mV/dec subthreshold swing, PMOS/NMOS on-current ratio near 1, 71% reduction in Cgd, and 55% reduction in Vt variation when compared with conventional transistors, although significant short-channel effects are observed.
Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 2, pp. 419-426, 2011
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