Analysis of Transconductance $(g_{m})$ in Schottky-Barrier MOSFETs

Analysis of Transconductance $(g_{m})$ in Schottky-Barrier MOSFETs,10.1109/TED.2010.2092778,IEEE Transactions on Electron Devices,Sung-Jin Choi,Chel-J

Analysis of Transconductance $(g_{m})$ in Schottky-Barrier MOSFETs   (Citations: 1)
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This paper experimentally investigates the unique be- havior of transconductance (gm ) in the Schottky-barrier metal- oxide-semiconductor field-effect transistors (SB-MOSFETs) with various silicide materials. When the Schottky-barrier height (SBH) or a scaling parameter is not properly optimized, a peculiar shape of gm is observed. Thus, gm can be used as a novel metric that exhibits the transition of the carrier injection mechanisms from a thermionic emission (TE) to thermally assisted tunneling (TU) in the SB-MOSFETs. When the local maximum point of gm is observed, it can be expected that an incomplete transition occurs between TE and TU in SB-MOSFETs. When a dopant-segregation (DS) technique is implemented in the SB-MOSFETs, however, the carrier injection efficiency from the source to the channel is significantly improved, although the SBH is not minimized. As a consequence, the peculiar shape of the gm disappears, i.e., a complete transition from TE to TU can be enabled by the DS technique. Index Terms—Current flow mechanism, dopant-segregated SB (DSSB), dopant segregation (DS), erbium silicide, ErSi1.7 ,p lat- inum silicide, PtSi, Schottky barrier (SB), Schottky-barrier (SB) MOSFET, silicon-on-insulator (SOI), thermionic emission (TE), transconductance, tunneling.
Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 2, pp. 427-432, 2011
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