Academic
Publications
Modeling and Analysis of an 80-Gbit/s SiGe HBT Electrooptic Modulator

Modeling and Analysis of an 80-Gbit/s SiGe HBT Electrooptic Modulator,10.1109/JPHOT.2010.2100038,IEEE Photonics Journal,Tuhin Guha Neogi,Shengling Den

Modeling and Analysis of an 80-Gbit/s SiGe HBT Electrooptic Modulator   (Citations: 1)
BibTex | RIS | RefWorks Download
We present a rigorous electrical and optical analysis of a strained and graded base SiGe Heterojunction Bipolar Transistor (HBT) electrooptic (EO) modulator. In this paper, we propose a 2-D model for a graded base SiGe HBT structure that is capable of operating at a data bit rate of 80 Gbit/s or higher. In this structure, apart from a polysilicon/ monosilicon emitter ðWidth ¼ 0:12 � mÞ and a strained SiGe graded base ðDepth ¼ 40 nmÞ, a selectively implanted collector (SIC) ðDepth ¼ 0:6 � mÞ is introduced. Furthermore, the terminal characteristics of this new device modeled using MEDICI are closely compared with the SiGe HBT in the IBM production line, suggesting the possibility of fast deployment of the EO modulator using established commercial processing. At a subcollector depth of 0.4 � m and at a base-emitter swing of 0 to 1.1 V, this model predicts a rise time of 5.1 ps and a fall time of 3.6 ps. Optical simulations predict aphase shift length ðL� Þ of 240.8 � m with an extinction ratio of 7.5 dB at a wavelength of 1.55 � m. Additionally, the tradeoff between the switching speed, Land propagation loss with a thinner subcollector is analyzed and reported.
Journal: IEEE Photonics Journal , vol. 3, no. 1, pp. 42-56, 2011
Cumulative Annual
View Publication
The following links allow you to view full publications. These links are maintained by other sources not affiliated with Microsoft Academic Search.
Sort by: