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Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors,10.1109/LED.2010.2091620,IEEE Electron Device Letters,Shou-En Li

Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors   (Citations: 1)
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We investigated the influence of passivation-layer de- position on the characteristics of a-InGaZnO thin-film transistors (TFTs). The threshold voltage (VT ) of the TFTs shifted markedly as a result of the mechanical stress induced by the passivation layers above. By adjusting the deposition parameters during the passivation process, the performance of the TFTs can be mod- ulated. The a-InGaZnO TFTs after dual passivation exhibited good performance with a field-effect mobility of 11.35 cm 2 /V · s, a threshold voltage of 2.86 V, and an on-off ratio of 10 8 .
Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 2, pp. 161-163, 2011
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