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Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth,10.1109/LED.2010.2090125,IEEE Electron Device Letters,Uttam Singisetti,Ma

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth   (Citations: 1)
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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 2, pp. 137-139, 2011
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