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A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE

A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE,10.1109/CSICS.2006.319923,David Schmelzer,Stephen I. Long

A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE   (Citations: 13)
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A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and a hybrid PCB. The amplifier has a peak PAE of 85 % with an output power of 16.5 W. An output power and drain efficiency tradeoff, dependant on the drain impedance at the fundamental frequency due to the on-state resistance, is explored. A comparison between Class F and inverse F, given particular operating conditions for this device, are made
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