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High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes

High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes,10.1038/nnano.2007.77,Nature Nanotechnology,Seong

High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes   (Citations: 173)
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Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for integration into transistors and other classes of electronic devices. The large number of SWNTs enable excellent device-level performance characteristics and good device-to-device uniformity, even with SWNTs that are electronically heterogeneous. Measurements on p- and n-channel transistors that involve as many as ~2,100 SWNTs reveal device-level mobilities and scaled transconductances approaching ~1,000 cm2 V-1 s-1 and ~ 3,000 S m-1, respectively, and with current outputs of up to ~1 A in devices that use interdigitated electrodes. PMOS and CMOS logic gates and mechanically flexible transistors on plastic provide examples of devices that can be formed with this approach. Collectively, these results may represent a route to large-scale integrated nanotube electronics.
Journal: Nature Nanotechnology - NAT NANOTECHNOL , vol. 2, no. 4, pp. 230-236, 2007
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    • ...Experimental groups [44], [45] have developed ways to grow perfectly aligned nanotubes on sapphire and quartz substrates, and the use of such techniques, combined with a novel method of transferring the tubes to Si-based substrates [46], has opened a new path toward the realization of perfectly aligned array-based CMOS-compatible MOSFET-like CNFETs [29]...

    Navid Paydavosiet al. RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Pa...

    • ...By patterning the growth substrate, in 2005, Yu et al. [9] took the first step toward the integration of aligned networks of nanotubes into CNFETs; more recently, by employing CVD techniques, perfectly aligned nanotubes were grown on sapphire and quartz [11], [12], and techniques exist to transfer such tubes to desired substrates [13]...

    Navid Paydavosiet al. RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Pa...

    • ...Hence, significant variations can exist in the spacing between CNTs (inter-CNT spacing in Fig. 1) [18], [24], [26], [27]...
    • ...Stripes of Fe nanoparticles, prepared by photolithographically patterning Fe using physical vapor deposition, acted as the catalyst as shown in Fig. 2(a) and (d) [18], [24]...
    • ...3 Aligned CNT growth processes produce CNTs with lengths >200 μm [18]...

    Jie Zhanget al. Characterization and Design of Logic Circuits in the Presence of Carbo...

    • ...Aligned CNTs are grown on single-crystal quartz wafers and then transferred to silicon wafers with thick (100 nm) silicon dioxide as the backgate oxide [16]‐[18]...
    • ...Current state of the art CNT density is 10 CNTs/μm [16]‐[18]...

    Nishant Patilet al. Scalable Carbon Nanotube Computational and Storage Circuits Immune to ...

    • ...In order to overcome these limitations, recent efforts have concentrated on CNT array-FETs (AFETs) made from aligned arrays of CNTs [21]–[24]...
    • ...AFET devices so far contain a mixture of s-CNTs and m-CNTs in the channel along with a diameter distribution [21]–[24], [37]...
    • ...Similar characteristics in AFETs have been experimentally observed due to the presence of m-CNTs [21], [22], [24]...

    Siyuranga O. Koswattaet al. Ultimate RF Performance Potential of Carbon Electronics

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