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Electrically pumped hybrid AlGaInAs-silicon evanescent laser

Electrically pumped hybrid AlGaInAs-silicon evanescent laser,10.1364/OE.14.009203,Optics Express,Alexander W. Fang,Oded Cohen,Richard Jones,Mario J. P

Electrically pumped hybrid AlGaInAs-silicon evanescent laser   (Citations: 169)
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An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 °C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.
Journal: Optics Express - OPT EXPRESS , vol. 14, no. 20, pp. 9203-9210, 2006
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    • ...The cross section of the hybrid silicon evanescent waveguide device is shown in Fig. 1 [23]...
    • ...Threshold current density and threshold voltage in this work are 30%‐40% lower than in [23]...
    • ...This value scales appropriately with the 4.5-Ω resistance measured on 800-μm-long FP lasers with similar III‐V mesa dimensions [23]...
    • ...Such lasers can be operated at 10 mW output power and around 250 mW electrical power consumption [23], [32]...

    Martijn J. R. Hecket al. Hybrid Silicon Photonics for Optical Interconnects

    • ...Alternatively, hybrid silicon lasers [18], [19] have been demonstrated by employing a III‐V gain layer on a silicon waveguide and are a good candidate for integrated on-chip laser sources for silicon photonic transmitters...
    • ...Second, as the same silicon waveguide is used to define both the hybrid and passive waveguides, alignment between these two devices is trivial and coupling loss can be minimized to <0.5 dB. One interesting aspect of this general device architecture is that it is not limited to a specific bonding technology, and groups around the world are investigating lasers using direct [18], [28], [29], benzocyclobutene (BCB) [30], and metal bonding ...
    • ...The general cross-sectional structure of the hybrid silicon devices is shown in Fig. 1 [18]...

    Matthew N. Sysaket al. Device and Integration Technology for Silicon Photonic Transmitters

    • ...Even though Ge-based optically pumped laser sources were recently reported [1], over the past years only heterogeneously integrated III-V materials showed noteworthy results regarding electrically-pumped compact laser sources on silicon [2, 3]. However, so far these results were not demonstrated using an integration scheme compatible with CMOS technologies...

    L. Grenouilletet al. Hybrid integration for silicon photonics applications

    • ...HE hybrid integration technologies of III–V and Si materials have been paid much attention because of their potentiality of realizing the small sizes and the high performances of the optical and electron devices [1], [2]...

    Masanori Nagaseet al. Ultrafast All-Optical Gating Operation Using Michelson Interferometer ...

    • ...At present, the more promising solution is provided by heterogeneous integration of III-V based lasers onto silicon through bonding technology [1,2]...

    Fabien Mandorloet al. Heterogeneous integration of III–V lasers on silicon for photonic/elec...

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