<?xml version="1.0" encoding="utf-8"?><rss version="2.0"><channel><title>RSS for Sung-Ki Park</title><link>http://academic.research.microsoft.com/Rss.aspx?id=20981352</link><description>Search RSS feed for Microsoft Academic Search</description><generator>MSRA Libra RSS Burner</generator><copyright>(c)2008 Microsoft Corpration, All right reserved.</copyright><pubDate>Wed, 19 Jun 2013 01:54:41 GMT</pubDate><lastBuildDate>Wed, 19 Jun 2013 01:54:41 GMT</lastBuildDate><category /><item><title>Sung-Ki Park (Personal Info)
      </title><link>http://academic.research.microsoft.com/Author/20981352</link><pubDate>Wed, 19 Jun 2013 01:54:41 GMT</pubDate><description><![CDATA[<p>Seoul National University<br/></p><p>
          Publications: 12</p><p>
          Citation Count: 9</p><p>
          G-index: 3</p><p>
         Field Rating: 2</p><p>Fields of study: <a href="http://academic.research.microsoft.com/RankList?entitytype=2&topDomainID=8&subDomainID=5&last=0&start=1&end=100">Construction</a><span class="span-break" >,&nbsp;</span><a href="http://academic.research.microsoft.com/RankList?entitytype=2&topDomainID=12&subDomainID=1&last=0&start=1&end=100">Cement</a><span class="span-break" >,&nbsp;</span><a href="http://academic.research.microsoft.com/RankList?entitytype=2&topDomainID=12&subDomainID=5&last=0&start=1&end=100">Glass</a><br/></p><p>Homepage:
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          Permanent Link:
          <a href="http://academic.research.microsoft.com/Author/20981352">http://academic.research.microsoft.com/Author/20981352</a></p>]]></description><guid isPermaLink="false">2098137323Seoul National University</guid></item><item><title>The Effect of Tunnel Barrier at Resistive Switching Device for Low Power Memory Applications</title><link>http://academic.research.microsoft.com/Publication/51056385</link><pubDate>Wed, 19 Jun 2013 01:54:41 GMT</pubDate><guid isPermaLink="false">2098135251056385</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/12671649'>Hyejung Choi</a>,  <a href='http://academic.research.microsoft.com/Author/56208440'>Jaeyun Yi</a>,  <a href='http://academic.research.microsoft.com/Author/51958205'>Sangmin Hwang</a>,  <a href='http://academic.research.microsoft.com/Author/19481448'>Sangkeum Lee</a>,  <a href='http://academic.research.microsoft.com/Author/53629742'>Seokpyo Song</a>,  <a href='http://academic.research.microsoft.com/Author/53613708'>Seunghwan Lee</a>,  <a href='http://academic.research.microsoft.com/Author/3407258'>Jaeyeon Lee</a>,  <a href='http://academic.research.microsoft.com/Author/47308483'>Donghee Son</a>,  <a href='http://academic.research.microsoft.com/Author/3389444'>Suk-Ju Kim</a>,  <a href='http://academic.research.microsoft.com/Author/13056973'>Ja-Yong Kim</a>,  <a href='http://academic.research.microsoft.com/Author/55182558'>Sunghoon Lee</a>,  <a href='http://academic.research.microsoft.com/Author/6316231'>Jiwon Moon</a>,  <a href='http://academic.research.microsoft.com/Author/54074984'>Choidong Kim</a>,  <a href='http://academic.research.microsoft.com/Author/51236487'>Jungwoo Park</a>,  <a href='http://academic.research.microsoft.com/Author/10617030'>Moonsig Joo</a>,  <a href='http://academic.research.microsoft.com/Author/65391'>JaeSung Roh</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>Sungki Park</a>,  <a href='http://academic.research.microsoft.com/Author/50233547'>Sung-Woong Chung</a>,  <a href='http://academic.research.microsoft.com/Author/56362407'>Junghoon Rhee</a>,  <a href='http://academic.research.microsoft.com/Author/50401845'>Sung Joo Hong</a></dl><p></p><p>IMW, 2011</p><p />]]></description></item><item><title>Requirements of bipolar switching ReRAM for 1T1R type high density memory array</title><link>http://academic.research.microsoft.com/Publication/51054218</link><pubDate>Wed, 19 Jun 2013 01:54:40 GMT</pubDate><guid isPermaLink="false">2098135251054218</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/56208440'>Jaeyun Yi</a>,  <a href='http://academic.research.microsoft.com/Author/12671649'>Hyejung Choi</a>,  <a href='http://academic.research.microsoft.com/Author/53629742'>Seokpyo Song</a>,  <a href='http://academic.research.microsoft.com/Author/47308483'>Donghee Son</a>,  <a href='http://academic.research.microsoft.com/Author/19481448'>Sangkeum Lee</a>,  <a href='http://academic.research.microsoft.com/Author/7229200'>Wangee Kim</a>,  <a href='http://academic.research.microsoft.com/Author/22342158'>Mingyu Sung</a>,  <a href='http://academic.research.microsoft.com/Author/55182558'>Sunghoon Lee</a>,  <a href='http://academic.research.microsoft.com/Author/6316231'>Jiwon Moon</a>,  <a href='http://academic.research.microsoft.com/Author/54074984'>Choidong Kim</a>,  <a href='http://academic.research.microsoft.com/Author/51236487'>Jungwoo Park</a>,  <a href='http://academic.research.microsoft.com/Author/10617030'>Moonsig Joo</a>,  <a href='http://academic.research.microsoft.com/Author/65391'>JaeSung Roh</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>Sungki Park</a>,  <a href='http://academic.research.microsoft.com/Author/50233547'>Sung-Woong Chung</a>,  <a href='http://academic.research.microsoft.com/Author/44490792'>Jaegoan Jeong</a>,  <a href='http://academic.research.microsoft.com/Author/50402025'>Sung-Joo Hong</a>,  <a href='http://academic.research.microsoft.com/Author/9199125'>Sung-Wook Park</a></dl><p></p><p>VLSI-TSA, pp. 1-2, 2011</p><p />]]></description></item><item><title>The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks</title><link>http://academic.research.microsoft.com/Publication/51145020</link><pubDate>Wed, 19 Jun 2013 01:54:39 GMT</pubDate><guid isPermaLink="false">2098135251145020</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/53677287'>BeomYong Kim</a>,  <a href='http://academic.research.microsoft.com/Author/55425156'>YunHyuck Ji</a>,  <a href='http://academic.research.microsoft.com/Author/48375367'>SeungMi Lee</a>,  <a href='http://academic.research.microsoft.com/Author/56764844'>BongSeok Jeon</a>,  <a href='http://academic.research.microsoft.com/Author/51772280'>KeeJeung Lee</a>,  <a href='http://academic.research.microsoft.com/Author/52771320'>Kwon Hong</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>SungKi Park</a></dl><p></p><p>ESSDERC, pp. 79-82, 2011</p><p />]]></description></item><item><title>Mix proportion of high-strength, roller-compacted, latex-modified rapid-set concrete for rapid road repair</title><link>http://academic.research.microsoft.com/Publication/49458357</link><pubDate>Wed, 19 Jun 2013 01:54:38 GMT</pubDate><guid isPermaLink="false">2098135249458357</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/22238047'>Jong-Pil Won</a>,  <a href='http://academic.research.microsoft.com/Author/119128'>Joon-Mo Kim</a>,  <a href='http://academic.research.microsoft.com/Author/18290097'>Su-Jin Lee</a>,  <a href='http://academic.research.microsoft.com/Author/1056730'>Sang-Woo Lee</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>Sung-Ki Park</a></dl><p></p><p>CONSTR BUILD MATER, vol. 25, no. 4, pp. 1796-1800, 2011</p><p />]]></description></item><item><title>Stress induced self aligned contact failure during tungsten-poly gate process in sub-60 nm memory device</title><link>http://academic.research.microsoft.com/Publication/51106702</link><pubDate>Wed, 19 Jun 2013 01:54:37 GMT</pubDate><guid isPermaLink="false">2098135251106702</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/22342158'>Min-Gyu Sung</a>,  <a href='http://academic.research.microsoft.com/Author/10884431'>Yong Soo Kim</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>Sung-Ki Park</a></dl><p></p><p>IPFA, pp. 1-4, 2011</p><p />]]></description></item><item><title>Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application</title><link>http://academic.research.microsoft.com/Publication/51017581</link><pubDate>Wed, 19 Jun 2013 01:54:36 GMT</pubDate><guid isPermaLink="false">2098135251017581</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/45465073'>SungJin Whang</a>,  <a href='http://academic.research.microsoft.com/Author/51772682'>KiHong Lee</a>,  <a href='http://academic.research.microsoft.com/Author/55511088'>DaeGyu Shin</a>,  <a href='http://academic.research.microsoft.com/Author/53677287'>BeomYong Kim</a>,  <a href='http://academic.research.microsoft.com/Author/52254583'>MinSoo Kim</a>,  <a href='http://academic.research.microsoft.com/Author/56087599'>JinHo Bin</a>,  <a href='http://academic.research.microsoft.com/Author/56603879'>JiHye Han</a>,  <a href='http://academic.research.microsoft.com/Author/716444'>SungJun Kim</a>,  <a href='http://academic.research.microsoft.com/Author/22507817'>BoMi Lee</a>,  <a href='http://academic.research.microsoft.com/Author/55971762'>YoungKyun Jung</a>,  <a href='http://academic.research.microsoft.com/Author/3648020'>SungYoon Cho</a>,  <a href='http://academic.research.microsoft.com/Author/52203792'>ChangHee Shin</a>,  <a href='http://academic.research.microsoft.com/Author/50366613'>HyunSeung Yoo</a>,  <a href='http://academic.research.microsoft.com/Author/55205719'>SangMoo Choi</a>,  <a href='http://academic.research.microsoft.com/Author/52771320'>Kwon Hong</a>,  <a href='http://academic.research.microsoft.com/Author/52025728'>S. Aritome</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>SungKi Park</a>,  <a href='http://academic.research.microsoft.com/Author/50402025'>SungJoo Hong</a></dl><p></p><p>IEDM, pp. 29.7.1-29.7.4, 2010</p><p>(Citations:3)</p>]]></description></item><item><title>Failure Analysis of an Anomalous Subthreshold Current in Nano-Scale NAND Flash Memory</title><link>http://academic.research.microsoft.com/Publication/50564091</link><pubDate>Wed, 19 Jun 2013 01:54:35 GMT</pubDate><guid isPermaLink="false">2098135250564091</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/824881'>Dong-Ho Lee</a>,  <a href='http://academic.research.microsoft.com/Author/3520410'>Seung-Woo Shin</a>,  <a href='http://academic.research.microsoft.com/Author/42933142'>Choon-Kun Ryu</a>,  <a href='http://academic.research.microsoft.com/Author/13158007'>Jae-Hoon Choi</a>,  <a href='http://academic.research.microsoft.com/Author/56102990'>Chae-Moon Lim</a>,  <a href='http://academic.research.microsoft.com/Author/20994545'>Noh-Yeal Kwak</a>,  <a href='http://academic.research.microsoft.com/Author/55681946'>Hyun-Soo Shon</a>,  <a href='http://academic.research.microsoft.com/Author/20997349'>Jaehyoung Koo</a>,  <a href='http://academic.research.microsoft.com/Author/52771320'>Kwon Hong</a>,  <a href='http://academic.research.microsoft.com/Author/21999171'>Byung-Seok Lee</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>Sung-Ki Park</a>,  <a href='http://academic.research.microsoft.com/Author/9199125'>Sung-Wook Park</a>,  <a href='http://academic.research.microsoft.com/Author/477777'>Kae-Dal Kwack</a></dl><p></p><p>IRPS, 2007</p><p />]]></description></item><item><title>Air-Gap Application and Simulation Results for Low Capacitance in 60nm NAND Flash Memory</title><link>http://academic.research.microsoft.com/Publication/50574710</link><pubDate>Wed, 19 Jun 2013 01:54:34 GMT</pubDate><guid isPermaLink="false">2098135250574710</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/53661538'>Sukjoong Kim</a>,  <a href='http://academic.research.microsoft.com/Author/56292911'>Wheewon Cho</a>,  <a href='http://academic.research.microsoft.com/Author/53678979'>Junggeun Kim</a>,  <a href='http://academic.research.microsoft.com/Author/21999171'>Byungseok Lee</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>Sungki Park</a></dl><p></p><p>NVSMW, 2007</p><p />]]></description></item><item><title>Improvement of within Wafer Uniformity of Device Parameters by Gradient Temperature Control with Bell Jar Hot Wall RTP</title><link>http://academic.research.microsoft.com/Publication/50543600</link><pubDate>Wed, 19 Jun 2013 01:54:33 GMT</pubDate><guid isPermaLink="false">2098135250543600</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/3521030'>KyungWon Lee</a>,  <a href='http://academic.research.microsoft.com/Author/54895606'>S. Kim</a>,  <a href='http://academic.research.microsoft.com/Author/49660712'>P. Frisella</a>,  <a href='http://academic.research.microsoft.com/Author/1842657'>B. Jacobs</a>,  <a href='http://academic.research.microsoft.com/Author/1346045'>G. Cai</a>,  <a href='http://academic.research.microsoft.com/Author/56940790'>R. Reece</a>,  <a href='http://academic.research.microsoft.com/Author/20994545'>NohYeal Kwak</a>,  <a href='http://academic.research.microsoft.com/Author/49733608'>ChulYoung Ham</a>,  <a href='http://academic.research.microsoft.com/Author/55349166'>KwangChul Joo</a>,  <a href='http://academic.research.microsoft.com/Author/824881'>DongHo Lee</a>,  <a href='http://academic.research.microsoft.com/Author/36925639'>SangWook Park</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>SungKi Park</a></dl><p></p><p>RTP, 2006</p><p />]]></description></item><item><title>The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory</title><link>http://academic.research.microsoft.com/Publication/50479114</link><pubDate>Wed, 19 Jun 2013 01:54:32 GMT</pubDate><guid isPermaLink="false">2098135250479114</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/22320051'>J. Om</a>,  <a href='http://academic.research.microsoft.com/Author/10659622'>Eunseok Choi</a>,  <a href='http://academic.research.microsoft.com/Author/51498140'>Sejun Kim</a>,  <a href='http://academic.research.microsoft.com/Author/53551838'>Heegee Lee</a>,  <a href='http://academic.research.microsoft.com/Author/18451943'>Yongwook Kim</a>,  <a href='http://academic.research.microsoft.com/Author/56470412'>Heenyun Chang</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>Sungki Park</a>,  <a href='http://academic.research.microsoft.com/Author/22320052'>Gihyun Bae</a></dl><p></p><p>IRPS, 2005</p><p />]]></description></item><item><title>Effects of CH[sub 2]F[sub 2] Addition on a High Aspect Ratio Contact Hole Etching in a C[sub 4]F[sub 6]/O[sub 2]/Ar Plasma</title><link>http://academic.research.microsoft.com/Publication/24464318</link><pubDate>Wed, 19 Jun 2013 01:54:31 GMT</pubDate><guid isPermaLink="false">2098135224464318</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/20171596'>Hyun-Kyu Ryu</a>,  <a href='http://academic.research.microsoft.com/Author/21999171'>Byung-Seok Lee</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>Sung-Ki Park</a>,  <a href='http://academic.research.microsoft.com/Author/6961676'>Il-Wook Kim</a>,  <a href='http://academic.research.microsoft.com/Author/13135716'>Chang-Koo Kim</a></dl><p></p><p>ELECTROCHEM SOLID STATE LETT, vol. 6, no. 9, 2003</p><p>(Citations:1)</p>]]></description></item><item><title>Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM</title><link>http://academic.research.microsoft.com/Publication/50291527</link><pubDate>Wed, 19 Jun 2013 01:54:30 GMT</pubDate><guid isPermaLink="false">2098135250291527</guid><description><![CDATA[<dl><a href='http://academic.research.microsoft.com/Author/50233547'>Sung-Woong Chung</a>,  <a href='http://academic.research.microsoft.com/Author/2838338'>Sang-Tae Ahn</a>,  <a href='http://academic.research.microsoft.com/Author/3744160'>Hyun-Chul Sohn</a>,  <a href='http://academic.research.microsoft.com/Author/51686691'>Jachun Ku</a>,  <a href='http://academic.research.microsoft.com/Author/20981352'>Sungki Park</a>,  <a href='http://academic.research.microsoft.com/Author/22249592'>Yong-Wook Song</a>,  <a href='http://academic.research.microsoft.com/Author/56507551'>Hyo-Sik Park</a>,  <a href='http://academic.research.microsoft.com/Author/10515824'>Sang-Don Lee</a></dl><p></p><p>IEDM, 2002</p><p>(Citations:5)</p>]]></description></item></channel></rss>