<?xml version="1.0" encoding="utf-8"?><rss version="2.0"><channel><title>RSS for Understanding of the Leakage Components and Its Correlation to the Oxide Scaling on the SONOS Cell Endurance and Retention</title><link>http://academic.research.microsoft.com/Rss.aspx?cata=9&amp;id=50503801</link><description>Search RSS feed for Microsoft Academic Search</description><generator>MSRA Libra RSS Burner</generator><copyright>(c)2008 Microsoft Corpration, All right reserved.</copyright><pubDate>Wed, 22 May 2013 07:56:04 GMT</pubDate><lastBuildDate>Wed, 22 May 2013 07:56:04 GMT</lastBuildDate><category /><item><title>Understanding of the Leakage Components and Its Correlation to the Oxide Scaling on the SONOS Cell Endurance and Retention</title><link>http://academic.research.microsoft.com/Publication/50503801</link><pubDate>Wed, 22 May 2013 00:56:04 GMT</pubDate><guid isPermaLink="false">505038011</guid><description><![CDATA[<div><a href="http://academic.research.microsoft.com/Author/3682922">C. H. Chen</a>, <a href="http://academic.research.microsoft.com/Author/3507866">P. Y. Chiang</a>, <a href="http://academic.research.microsoft.com/Author/10556007">S. S. Chung</a>, <a href="http://academic.research.microsoft.com/Author/13199486">T. Chen</a>, <a href="http://academic.research.microsoft.com/Author/56824527">G. C. W. Chou</a>, <a href="http://academic.research.microsoft.com/Author/3331692">C. H. Chu</a>:
            
            <span style="margin-left:20px">(Citations:1)</span><span style="margin-left:20px"><a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4016590">view publication</a></span></div><div>In this paper, the ONO layer scaling and the leakage components in a SONOS cell have been extensively studied. The reliability with focus on both endurance and data retention has been demonstrated. Results have shown that the cell with thinner blocking oxide has better endurance, while it has poorer data retention. However, this can be achieved by a good control of the oxide quality. In terms of the data retention, thermionic and direct tunneling, in relating to the charge loss, are the two dominant leakage components, which can be separated. Moreover, after cycling, we can separate another third leakage component, the trap-to-trap tunneling induced leakage. These results are useful toward an understanding of the leakage mechanisms of SONOS cell as well as the scaling design of ONO layers</div><div>Conference: <a href="http://academic.research.microsoft.com/Conference/3017">International Symposium on VLSI Technology, Systems and Applications - VLSI-TSA</a>, pp. 1-2, 2006</div><div></div><div />]]></description></item></channel></rss>